@article {137126,
	title = {Optoelectronic properties of single-layer, double-layer, and bulk tin sulfide: A theoretical study},
	journal = {Journal of Applied Physics},
	volume = {113},
	year = {2013},
	pages = {233507},
	abstract = {SnS\&nbsp;is a metal monochalcogenide suitable for use as absorber\&nbsp;material\&nbsp;in thin film\&nbsp;photovoltaic cells.\&nbsp;Its\&nbsp;structure\&nbsp;is an orthorhombic crystal of weakly coupled layers, each layer consisting of strongly bonded Sn-S units. We use first-principles calculations to study model single-layer, double-layer, and bulk\&nbsp;structures\&nbsp;of\&nbsp;SnS\&nbsp;in order to elucidate its electronic structure. We find that the optoelectronic\&nbsp;properties\&nbsp;of the\&nbsp;material\&nbsp;can vary significantly with respect to the number of layers and the separation between them: the calculated\&nbsp;band gap\&nbsp;is wider for fewer layers (2.72 eV, 1.57 eV, and 1.07 eV for single-layer, double-layer, and bulk\&nbsp;SnS,\&nbsp;respectively) and increases with tensile strain along the layer stacking direction (by \~{}55 meV/1\% strain).},
	author = {Georgios A. Tritsaris and Brad D. Malone and Efthimios Kaxiras}
}
