@article { ISI:000449171600001, title = {High performance tunnel field effect transistors based on in-plane transition metal dichalcogenide heterojunctions}, journal = {NANOTECHNOLOGY}, volume = {30}, number = {2}, year = {2019}, month = {JAN 11}, abstract = {In-plane heterojunction tunnel field effect transistors based on monolayer transition metal dichalcogenides are studied by means of self-consistent non-equilibrium Green{\textquoteright}s functions simulations and an atomistic tight-binding Hamiltonian. We start by comparing several heterojunctions before focusing on the most promising ones, i.e. WTe2-MoS2 and MoTe2-MoS2. The scalability of those devices as a function of channel length is studied, and the influence of backgate voltages on device performance is analyzed. Our results indicate that, by fine-tuning the design parameters, those devices can yield extremely low subthreshold swings (, issn = {0957-4484}, doi = {10.1088/1361-6528/aae7df}, author = {Choukroun, Jean and Pala, Marco and Fang, Shiang and Efthimios Kaxiras and Dollfus, Philippe} }