%0 Journal Article %J NANOTECHNOLOGY %D 2019 %T High performance tunnel field effect transistors based on in-plane transition metal dichalcogenide heterojunctions %A Choukroun, Jean %A Pala, Marco %A Fang, Shiang %A Efthimios Kaxiras %A Dollfus, Philippe %X In-plane heterojunction tunnel field effect transistors based on monolayer transition metal dichalcogenides are studied by means of self-consistent non-equilibrium Green's functions simulations and an atomistic tight-binding Hamiltonian. We start by comparing several heterojunctions before focusing on the most promising ones, i.e. WTe2-MoS2 and MoTe2-MoS2. The scalability of those devices as a function of channel length is studied, and the influence of backgate voltages on device performance is analyzed. Our results indicate that, by fine-tuning the design parameters, those devices can yield extremely low subthreshold swings (<5 mV/decade) and I-ON/I-OFF ratios higher than 10(8) at a supply voltage of 0.3 V, making them ideal for ultra-low power consumption. %B NANOTECHNOLOGY %V 30 %8 JAN 11 %G eng %N 2 %R 10.1088/1361-6528/aae7df