Citation:
Kaxiras E, J.D.Joannopoulos OLA, Turner GW. Microscopic model of heteroepitaxy of GaAs on Si(100). Phys. Rev. Lett. 1989;62 :2484.
Kaxiras Research Group
Department of Physics and School of Engineering and Applied Sciences
PI Office: Lyman Laboratory 339
Group Offices: Cruft Laboratory 4th floor
