Citation:
Kaxiras OLAE, Joannopoulos JD, Turner GW. Model of epitaxial growth of GaAs on Si(100) - nucleation at surface steps. J. Vac. Sci. Technol. 1989;B7 :695.
Kaxiras Research Group
Department of Physics and School of Engineering and Applied Sciences
PI Office: Lyman Laboratory 339
Group Offices: Cruft Laboratory 4th floor
