Publications by Year: 1989

Kaxiras E, Manousakis E. Reply to ``Comment on `Ground state of the strong-coupling Hubbard Hamiltonian: A numerical diagonalization study' ''. Phys. Rev. B. 1989;40 :2596–2597.
Lyo I-W, Kaxiras E, Avouris P. Adsorption of B on Si(111): Its effect on surface electronicstates and reconstruction. Phys. Rev. Lett. 1989;63 :1261.
Kaxiras E, Pandey KC. Isolated As antisite in GaAs: possibility of the EL2 defect. Phys. Rev. B. 1989;40 :8020.
Kaxiras E, J.D.Joannopoulos OLA, Turner GW. Microscopic model of heteroepitaxy of GaAs on Si(100). Phys. Rev. Lett. 1989;62 :2484.
Kaxiras OLAE, Joannopoulos JD, Turner GW. Model of epitaxial growth of GaAs on Si(100) - nucleation at surface steps. J. Vac. Sci. Technol. 1989;B7 :695.
Kaxiras E, Joannopoulos JD. On the possibility of two-dimensional growth of GaAs on atomically flat Si(100) surfaces. Surf. Sci. 1989;224 :515.
Shih CK, Kaxiras E, Feenstra RM, Pandey KC. Scanning-tunneling microscopy and first-principles theory of the Sn/GaAs (110) surface. Phys. Rev. B. 1989;40 :10044.
Copel M, Reuter MC, Kaxiras E, Tromp RM. Surfactants in epitaxial growth. Phys. Rev. Lett. 1989;63 :632.
Kaxiras E. Structural model for a covalently bonded Si45 cluster. Chem. Phys. Lett. 1989;163 :323.