Avouris P, Lyo I-W, Boszo F, Kaxiras E. Adsorption of boron on Si(111): physics, chemistry, and atomic-scale electronic devices. J. Vac. Sci. Technol. 1990;A8 :3405.

Kaxiras E. Effect of surface reconstruction on stability and reactivity of Si clusters. Phys. Rev. Lett. 1990;64 :551.

Rappe AM, Rabe KM, Kaxiras E, poulos JDJ-. Optimized pseudopotentials. Phys.Rev. B. 1990;41 :1227.

Kaxiras E, J.D.Joannopoulos OLA, Turner GW. Thermodynamic and kinetic aspects of GaAs growth on Si(100). Superlattices and Microstructures. 1990;8 :229.

Kaxiras E, Pandey KC, Himpsel FJ, Tromp RM. Electronic states due to surface doping: Si(111)√3×√3-B. Phys. Rev. B. 1990;41 :1262–1265.

M\aartensson P, Meyer G, Amer NM, Kaxiras E, Pandey KC. Evidence for trimer reconstruction of Si(111) √3×√3 -Sb: Scanning tunneling microscopy and first-principles theory. Phys. Rev. B. 1990;42 :7230–7233.