Leifeld O, Hartmann R, M?ller E, Kaxiras E, Kern K, Gr?tzmacher D.
Self-organized growth of Ge quantum dots on Si(001) substrates induced by sub-monolayer C coverages. Nanotechnology. 1999;10 :122.
Publisher's VersionAbstractGe dots are grown on Si(001) substrates pre-covered with 0.05-0.1 monolayers (ML) of carbon. The C pre-deposition reduces the dot size to less than 20 nm at growth temperatures ranging from 450 to 550 ?C. In situ scanning tunnelling microscopy (STM) shows that submonolayer C-deposition locally induces c(4 ? 4) reconstruction. The reconstruction is assigned to clusters of six C atoms localized in the two topmost atomic layers in between two Si surface dimers. The non-uniform distribution of carbon together with the enhanced surface roughness give rise to the early onset of island formation at Ge coverages as low as 2.5 ML. These islands show intense photoluminescence signals at 4 K. STM and transmission electron microscopy show that the islands are irregularly shaped. No faceting is detected up to coverages of 4 ML. At 5.8 ML of Ge islands with (105) side facets and a (001) top facet are observed.
Leifeld O, Grützmacher D, Müller B, Kern K, Kaxiras E, Kelires PC.
Dimer Pairing on the C-Alloyed Si(001) Surface. Phys. Rev. Lett. 1999;82 :972–975.
Waghmare UV, V.Bulatov, Kaxiras E, Duesbery MS.
Microalloying for ductility in molybdenum disilicide. Mat. Sci. and Engin. A. 1999;261 :147.
Theodorou G, Tsegas G, Kaxiras E.
Theory of electronic and optical properties of 3c-SiC. J. Appl. Phys. 1999;85 :2179.
Waghmare UV, Kaxiras E, V.Bulatov, Duesbery MS.
331 slip on (013) planes in molybdenum disilicide. Phil. Mag. A. 1999;79 :655.
Broughton JQ, Bernstein N, Kaxiras E, Abraham FF.
Concurrent coupling of length scales: methodology and application. Phys. Rev. B. 1999;60 :2391.
Theodorou G, Tsegas G, Kelires PC, Kaxiras E.
Electronic and optical properties of Si_(1-x)C_x alloys. Phys. Rev. B. 1999;60 :11494.