Kaxiras E, J.D.Joannopoulos OLA, Turner GW. Thermodynamic and kinetic aspects of GaAs growth on Si(100). Superlattices and Microstructures. 1990;8 :229.

Kaxiras E, Pandey KC, Himpsel FJ, Tromp RM. Electronic states due to surface doping: Si(111)√3×√3-B. Phys. Rev. B. 1990;41 :1262–1265.

M\aartensson P, Meyer G, Amer NM, Kaxiras E, Pandey KC. Evidence for trimer reconstruction of Si(111) √3×√3 -Sb: Scanning tunneling microscopy and first-principles theory. Phys. Rev. B. 1990;42 :7230–7233.

Kaxiras E, Manousakis E. Reply to ``Comment on `Ground state of the strong-coupling Hubbard Hamiltonian: A numerical diagonalization study' ''. Phys. Rev. B. 1989;40 :2596–2597.

Lyo I-W, Kaxiras E, Avouris P. Adsorption of B on Si(111): Its effect on surface electronicstates and reconstruction. Phys. Rev. Lett. 1989;63 :1261.

Kaxiras E, Pandey KC. Isolated As antisite in GaAs: possibility of the EL2 defect. Phys. Rev. B. 1989;40 :8020.

Kaxiras E, J.D.Joannopoulos OLA, Turner GW. Microscopic model of heteroepitaxy of GaAs on Si(100). Phys. Rev. Lett. 1989;62 :2484.

Kaxiras OLAE, Joannopoulos JD, Turner GW. Model of epitaxial growth of GaAs on Si(100) - nucleation at surface steps. J. Vac. Sci. Technol. 1989;B7 :695.

Kaxiras E, Joannopoulos JD. On the possibility of two-dimensional growth of GaAs on atomically flat Si(100) surfaces. Surf. Sci. 1989;224 :515.

Shih CK, Kaxiras E, Feenstra RM, Pandey KC. Scanning-tunneling microscopy and first-principles theory of the Sn/GaAs (110) surface. Phys. Rev. B. 1989;40 :10044.

Copel M, Reuter MC, Kaxiras E, Tromp RM. Surfactants in epitaxial growth. Phys. Rev. Lett. 1989;63 :632.

Kaxiras E. Structural model for a covalently bonded Si45 cluster. Chem. Phys. Lett. 1989;163 :323.

Kaxiras E, Manousakis E. Ground state of the strong-coupling Hubbard Hamiltonian: A numerical diagonalization study. Phys. Rev. B. 1988;37 :656.

Kaxiras E, Joannopoulos JD. Hydrogenation of semiconductor surfaces: Si and Ge(111). Phys. Rev. B. 1988;37 :8842.

Kaxiras E, Pandey KC. Energetics of defects and diffusion mechanisms in graphite. Phys. Rev. Lett. 1988;61 :2693.

Kaxiras E, Manousakis E. Hole dynamics in the two-dimensional strong-coupling Hubbard Hamiltonian. Phys. Rev. B. 1988;38 :866.

Kaxiras E, Pandey KC. New classical potential for accurate simulation of atomic processes in Si. Phys. Rev. B. 1988;38 :12736.

Kaxiras E, Bar-Yam Y, Joannopoulos JD, Pandey KC. Ab-initio theory of polar semiconductor surfaces: I. Methodology and the (2 x 2)reconstructions of GaAs(111). Phys. Rev. B. 1987;35 :9625.

Kaxiras E, Bar-Yam Y, Joannopoulos JD, Pandey KC. Ab-initio theory of polar semiconductor surfaces: II.(2 x 2) reconstructions and related transitions on GaAs(111). Phys. Rev. B. 1987;35 :9636.

Kaxiras E, Bar-Yam Y, Joannopoulos JD, Pandey KC. (2 x 2) reconstructions of the 111 polar surfaces of GaAs. Phys. Rev. B. 1986;33 :4406.